Effect of current spreading on the efficiency droop of InGaN light-emitting diodes

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation

(2010) Hyunsung Kim et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Theoretical Considerations on Current Spreading in GaN-Based Light Emitting Diodes Fabricated with Top-Emission Geometry

(2010) Hyunsoo Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes

(2010) Jun Ho Son et al.   OPTICS EXPRESS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes

(2009) J.-R. Chen et al.   APPLIED PHYSICS B-LASERS AND OPTICS

Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

(2009) M. Zhang et al.   APPLIED PHYSICS LETTERS

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

(2009) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

(2009) M.H. Crawford   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

(2009) Matteo Meneghini et al.   JOURNAL OF APPLIED PHYSICS

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

(2008) Xianfeng Ni et al.   APPLIED PHYSICS LETTERS

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Effect of Silicon Doping in the Quantum-Well Barriers on the Electrical and Optical Properties of Visible Green Light-Emitting Diodes

(2008) Jae-Hyun Ryou et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

A Method for Current Spreading Analysis and Electrode Pattern Design in Light-Emitting Diodes

(2008) Sungmin Hwang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of active-layer structures on temperature characteristics of InGaN blue laser diodes

(2008) Han-Youl Ryu et al.   OPTICS EXPRESS

Transcending the replacement paradigm of solid-state lighting

(2008) Jong Kyu Kim et al.   OPTICS EXPRESS

Performance of high-power III-nitride light emitting diodes

(2008) G. Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE