Formation of Selective High Barrier Region by Inductively Coupled Plasma Treatment on GaN-Based Light-Emitting Diodes

Published 2010 View Full Article

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Title
Formation of Selective High Barrier Region by Inductively Coupled Plasma Treatment on GaN-Based Light-Emitting Diodes
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 11, Pages 116504
Publisher
Japan Society of Applied Physics
Online
2010-11-22
DOI
10.1143/jjap.49.116504

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