Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes

III-Nitride Photonics

(2012) Nelson Tansu et al.   IEEE Photonics Journal

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Investigation of optical properties of InGaN–InN–InGaN/GaN quantum-well in the green spectral regime

(2011) Yi Li et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes

(2010) Chia-Lung Tsai et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Anti-reflection layer formed by monolayer of microspheres

(2010) C.-H. Chan et al.   APPLIED PHYSICS B-LASERS AND OPTICS

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

(2010) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Optical gain characteristics of staggered InGaN quantum wells lasers

(2010) Hongping Zhao et al.   JOURNAL OF APPLIED PHYSICS

Optical properties of type-II InGaN/GaAsN/GaN quantum wells

(2010) Seoung-Hwan Park et al.   OPTICAL AND QUANTUM ELECTRONICS

Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate

(2010) Seoung-Hwan Park et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

(2009) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography

(2009) Wai Yuen Fu et al.   APPLIED PHYSICS LETTERS

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

(2009) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Design Optimization of Photonic Crystal Structure for Improved Light Extraction of GaN LED

(2009) Dang Hoang Long et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

(2009) Hongping Zhao et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses

(2009) Yik-Khoon Ee et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

(2009) M.H. Crawford   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

(2009) Hisashi Masui et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Brightness InGaN–GaN Power Flip-Chip LEDs

(2009) Shoou-Jinn Chang et al.   JOURNAL OF LIGHTWAVE TECHNOLOGY

III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

(2009) Jonathan J. Wierer et al.   Nature Photonics

Type-II InGaN-GaNAs quantum wells for lasers applications

(2008) Ronald A. Arif et al.   APPLIED PHYSICS LETTERS

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

(2008) Hongping Zhao et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers

(2008) Hongping Zhao et al.   JOURNAL OF APPLIED PHYSICS

Investigation of the Deposition of Microsphere Monolayers for Fabrication of Microlens Arrays

(2008) Pisist Kumnorkaew et al.   LANGMUIR