Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate

Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy

(2014) Marta Sobanska et al.   JOURNAL OF APPLIED PHYSICS

Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires

(2013) D. Sam-Giao et al.   JOURNAL OF APPLIED PHYSICS

Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy

(2013) Sergio Fernández-Garrido et al.   NANO LETTERS

Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes

(2013) Santino D. Carnevale et al.   NANO LETTERS

In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

(2012) K. Hestroffer et al.   APPLIED PHYSICS LETTERS

GaN based nanorods for solid state lighting

(2012) Shunfeng Li et al.   JOURNAL OF APPLIED PHYSICS

Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

(2012) Sergio Fernández-Garrido et al.   NANO LETTERS

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate

(2012) A Wierzbicka et al.   NANOTECHNOLOGY

Methanol, ethanol and hydrogen sensing using metal oxide and metal (TiO2–Pt) composite nanoclusters on GaN nanowires: a new route towards tailoring the selectivity of nanowire/nanocluster chemical sensors

(2012) Geetha S Aluri et al.   NANOTECHNOLOGY

Scaling thermodynamic model for the self-induced nucleation of GaN nanowires

(2012) Vladimir G. Dubrovskii et al.   PHYSICAL REVIEW B

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

(2011) L. Geelhaar et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

(2011) Rafael Mata et al.   JOURNAL OF CRYSTAL GROWTH

Macro- and micro-strain in GaN nanowires on Si(111)

(2011) B Jenichen et al.   NANOTECHNOLOGY

Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

(2011) V. Consonni et al.   PHYSICAL REVIEW B

Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

(2011) Karine Hestroffer et al.   PHYSICAL REVIEW B

In situ investigation of self-induced GaN nanowire nucleation on Si

(2010) C. Chèze et al.   APPLIED PHYSICS LETTERS

Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

(2010) Hiroto Sekiguchi et al.   APPLIED PHYSICS LETTERS

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

(2010) Caroline Chèze et al.   Nano Research

Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy

(2010) G Koblmüller et al.   NANOTECHNOLOGY

Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

(2010) Oliver Brandt et al.   PHYSICAL REVIEW B

Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates

(2009) P. Corfdir et al.   JOURNAL OF APPLIED PHYSICS

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

(2009) S. Fernández-Garrido et al.   JOURNAL OF APPLIED PHYSICS

Formation of GaN nanodots on Si (111) by droplet nitridation

(2009) R.K. Debnath et al.   JOURNAL OF CRYSTAL GROWTH

Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy

(2009) O Landré et al.   NANOTECHNOLOGY

Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

(2008) A. Fontcuberta i Morral et al.   APPLIED PHYSICS LETTERS

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

(2008) Florian Furtmayr et al.   JOURNAL OF APPLIED PHYSICS

Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

(2008) K.A. Bertness et al.   JOURNAL OF CRYSTAL GROWTH

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

(2008) Jelena Ristić et al.   JOURNAL OF CRYSTAL GROWTH

Polarization-resolved phonon-assisted optical transitions of bound excitons in wurtzite GaN

(2008) A. A. Toropov et al.   PHYSICAL REVIEW B

Interface and Wetting Layer Effect on the Catalyst-Free Nucleation and Growth of GaN Nanowires

(2008) Toma Stoica et al.   Small