Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs

(2013) Hagyoul Bae et al.   IEEE ELECTRON DEVICE LETTERS

Analytical Current and Capacitance Models for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors

(2013) Minkyung Bae et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

(2012) E. Fortunato et al.   ADVANCED MATERIALS

Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

(2012) Piero Migliorato et al.   APPLIED PHYSICS LETTERS

Amorphous InGaZnO Thin-Film Transistors—Part II: Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability

(2012) Yongsik Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Amorphous InGaZnO Thin-Film Transistors—Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range

(2012) Yongsik Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state

(2012) Ho-Hyun Nahm et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

The Influence of In/Zn Ratio on the Performance and Negative-Bias Instability of Hf–In–Zn–O Thin-Film Transistors Under Illumination

(2011) Hyun-Suk Kim et al.   IEEE ELECTRON DEVICE LETTERS

The influence of sputtering power and O2/Ar flow ratio on the performance and stability of Hf–In–Zn–O thin film transistors under illumination

(2010) Hyun-Suk Kim et al.   APPLIED PHYSICS LETTERS

The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor

(2010) Jang-Yeon Kwon et al.   APPLIED PHYSICS LETTERS

The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination

(2010) Joon Seok Park et al.   APPLIED PHYSICS LETTERS

Relation Between Low-Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors

(2010) Sungchul Kim et al.   IEEE ELECTRON DEVICE LETTERS

Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics

(2010) Sangwon Lee et al.   IEEE ELECTRON DEVICE LETTERS

Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)

(2010) Yong Woo Jeon et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS