Amorphous InGaZnO Thin-Film Transistors—Part II: Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability
Published 2012 View Full Article
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Title
Amorphous InGaZnO Thin-Film Transistors—Part II: Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 59, Issue 10, Pages 2699-2706
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2012-09-11
DOI
10.1109/ted.2012.2208971
References
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Related references
Note: Only part of the references are listed.- Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor
- (2011) Himchan Oh et al. APPLIED PHYSICS LETTERS
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- Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors
- (2011) Dongsik Kong et al. JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors
- (2011) Hyeon-Kyun Noh et al. PHYSICAL REVIEW B
- The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays
- (2011) Jae Kyeong Jeong SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors
- (2010) Byungki Ryu et al. APPLIED PHYSICS LETTERS
- Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor
- (2010) Himchan Oh et al. APPLIED PHYSICS LETTERS
- Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors
- (2010) Md Delwar Hossain Chowdhury et al. APPLIED PHYSICS LETTERS
- Persistent photoconductivity in Hf–In–Zn–O thin film transistors
- (2010) Khashayar Ghaffarzadeh et al. APPLIED PHYSICS LETTERS
- The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor
- (2010) Jang-Yeon Kwon et al. APPLIED PHYSICS LETTERS
- Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress
- (2010) Khashayar Ghaffarzadeh et al. APPLIED PHYSICS LETTERS
- Large Photoresponse in Amorphous In–Ga–Zn–O and Origin of Reversible and Slow Decay
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- Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics
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- Analysis of Bias Stress Instability in Amorphous InGaZnO Thin-Film Transistors
- (2010) Edward Namkyu Cho et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)
- (2010) Yong Woo Jeon et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Present status of amorphous In–Ga–Zn–O thin-film transistors
- (2010) Toshio Kamiya et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress
- (2009) Sangwon Lee et al. APPLIED PHYSICS LETTERS
- The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors
- (2009) Kwang-Hee Lee et al. APPLIED PHYSICS LETTERS
- Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping
- (2009) T. Kamiya et al. Journal of Display Technology
- Rich Variety of Defects in ZnO via an Attractive Interaction between O Vacancies and Zn Interstitials: Origin ofn-Type Doping
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- Charge trapping and detrapping characteristics in amorphous InGaZnO TFTs under static and dynamic stresses
- (2008) In-Tak Cho et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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