Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States

Band alignment of HfO2/Al0.25Ga0.75N determined by x-ray photoelectron spectroscopy: Effect of SiH4 surface treatment

(2014) Man Hon Samuel Owen et al.   APPLIED PHYSICS LETTERS

Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on AlGaN

(2013) Xiaoye Qin et al.   APPLIED PHYSICS LETTERS

In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N

(2013) Xiaoye Qin et al.   JOURNAL OF APPLIED PHYSICS

Electronic surface and dielectric interface states on GaN and AlGaN

(2013) Brianna S. Eller et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

GaN(0001) surface states: Experimental and theoretical fingerprints to identify surface reconstructions

(2013) M. Himmerlich et al.   PHYSICAL REVIEW B

In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN

(2012) Barry Brennan et al.   APPLIED PHYSICS LETTERS

Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures

(2012) Junwoo Son et al.   APPLIED PHYSICS LETTERS

Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride

(2012) Jialing Yang et al.   JOURNAL OF APPLIED PHYSICS

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

(2012) Rathnait D. Long et al.   Materials

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

(2011) Michele Esposto et al.   APPLIED PHYSICS LETTERS

Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach

(2011) R. R. Pelá et al.   APPLIED PHYSICS LETTERS

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

(2011) Satyaki Ganguly et al.   APPLIED PHYSICS LETTERS

Band Alignment and Performance Improvement Mechanisms of Chlorine-Treated ZnO-Gate AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors

(2011) Ya-Lan Chiou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Spontaneous polarization and band gap bowing in YxAlyGa1-x-yN alloys lattice-matched to GaN

(2011) Kazuhiro Shimada et al.   JOURNAL OF APPLIED PHYSICS

Normally off operation GaN-based MOSFETs for power electronics applications

(2010) Yuki Niiyama et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Surface states and origin of the Fermi level pinning on nonpolar GaN(11¯00) surfaces

(2008) L. Ivanova et al.   APPLIED PHYSICS LETTERS

Elasticity, band-gap bowing, and polarization of AlxGa1−xN alloys

(2008) Yifeng Duan et al.   JOURNAL OF APPLIED PHYSICS