Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States
出版年份 2014 全文链接
标题
Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States
作者
关键词
GaN, AlGaN, polarization, surface states, band bending
出版物
JOURNAL OF ELECTRONIC MATERIALS
Volume 43, Issue 12, Pages 4560-4568
出版商
Springer Nature
发表日期
2014-09-05
DOI
10.1007/s11664-014-3383-z
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Band alignment of HfO2/Al0.25Ga0.75N determined by x-ray photoelectron spectroscopy: Effect of SiH4 surface treatment
- (2014) Man Hon Samuel Owen et al. APPLIED PHYSICS LETTERS
- Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on AlGaN
- (2013) Xiaoye Qin et al. APPLIED PHYSICS LETTERS
- In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N
- (2013) Xiaoye Qin et al. JOURNAL OF APPLIED PHYSICS
- Electronic surface and dielectric interface states on GaN and AlGaN
- (2013) Brianna S. Eller et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- GaN(0001) surface states: Experimental and theoretical fingerprints to identify surface reconstructions
- (2013) M. Himmerlich et al. PHYSICAL REVIEW B
- In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN
- (2012) Barry Brennan et al. APPLIED PHYSICS LETTERS
- Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures
- (2012) Junwoo Son et al. APPLIED PHYSICS LETTERS
- Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride
- (2012) Jialing Yang et al. JOURNAL OF APPLIED PHYSICS
- Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices
- (2012) Rathnait D. Long et al. Materials
- Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
- (2011) Michele Esposto et al. APPLIED PHYSICS LETTERS
- Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach
- (2011) R. R. Pelá et al. APPLIED PHYSICS LETTERS
- Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
- (2011) Satyaki Ganguly et al. APPLIED PHYSICS LETTERS
- Band Alignment and Performance Improvement Mechanisms of Chlorine-Treated ZnO-Gate AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors
- (2011) Ya-Lan Chiou et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Spontaneous polarization and band gap bowing in YxAlyGa1-x-yN alloys lattice-matched to GaN
- (2011) Kazuhiro Shimada et al. JOURNAL OF APPLIED PHYSICS
- Normally off operation GaN-based MOSFETs for power electronics applications
- (2010) Yuki Niiyama et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Surface states and origin of the Fermi level pinning on nonpolar GaN(11¯00) surfaces
- (2008) L. Ivanova et al. APPLIED PHYSICS LETTERS
- Elasticity, band-gap bowing, and polarization of AlxGa1−xN alloys
- (2008) Yifeng Duan et al. JOURNAL OF APPLIED PHYSICS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now