Band alignment of HfO2/Al0.25Ga0.75N determined by x-ray photoelectron spectroscopy: Effect of SiH4 surface treatment

Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy

(2013) Man Hon Samuel Owen et al.   APPLIED PHYSICS LETTERS

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

(2013) Yuhao Zhang et al.   APPLIED PHYSICS LETTERS

0.2-$\mu{\rm m}$ AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition ${\rm Al}_{2}{\rm O}_{3}$ Passivation

(2013) Dong Xu et al.   IEEE ELECTRON DEVICE LETTERS

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

(2013) Stephanie Rennesson et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

(2013) Derek W. Johnson et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode

(2012) Rong Xuan et al.   APPLIED PHYSICS LETTERS

Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

(2011) Herwig Hahn et al.   Applied Physics Express

Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique

(2011) Yuhua Wen et al.   APPLIED PHYSICS LETTERS

Impact of In situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

(2011) Xinke Liu et al.   APPLIED PHYSICS LETTERS

Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach

(2011) R. R. Pelá et al.   APPLIED PHYSICS LETTERS

Low Ohmic Contact Resistancem-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations

(2010) Tetsuya Fujiwara et al.   Applied Physics Express

18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation

(2010) Z. H. Feng et al.   IEEE ELECTRON DEVICE LETTERS

Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

(2010) F. Medjdoub et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

(2010) A. El Fatimy et al.   JOURNAL OF APPLIED PHYSICS

Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

(2010) Kevin J. Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

(2010) Hiroshi Kambayashi et al.   SOLID-STATE ELECTRONICS

Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator

(2009) S. Sugiura et al.   SOLID-STATE ELECTRONICS

Band alignment between amorphous Ge2Sb2Te5 and prevalent complementary-metal-oxide-semiconductor materials

(2008) Lina Wei-Wei Fang et al.   APPLIED PHYSICS LETTERS

Effects of annealing on the valence band offsets between hafnium aluminate and silicon

(2008) S. Y. Chiam et al.   JOURNAL OF APPLIED PHYSICS