Effect of boron concentration on recombination at the p-Si–Al2O3 interface
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Title
Effect of boron concentration on recombination at the p-Si–Al2O3 interface
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 9, Pages 093707
Publisher
AIP Publishing
Online
2014-03-08
DOI
10.1063/1.4867643
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Note: Only part of the references are listed.- Empirical determination of the energy band gap narrowing in highly doped n+ silicon
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- Surface Passivation of Boron-Diffused p-Type Silicon Surfaces With (1 0 0) and (1 1 1) Orientations by ALD Al$_{2}$O$_{3}$ Layers
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- (2012) Shubham Duttagupta et al. PROGRESS IN PHOTOVOLTAICS
- Very low surface recombination velocity of boron doped emitter passivated with plasma-enhanced chemical-vapor-deposited AlOx layers
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- Boron Emitter Passivation With Al$_{\bf 2}$O $_{\bf 3}$ and Al$_{\bf 2}$O$_{\bf 3}$/SiN$_{\bm x}$ Stacks Using ALD Al$_{\bf 2}$O $_{\bf 3}$
- (2012) Armin Richter et al. IEEE Journal of Photovoltaics
- Process Control of Reactive Sputter Deposition of AlO $_{x}$ and Improved Surface Passivation of Crystalline Silicon
- (2012) Xinyu Zhang et al. IEEE Journal of Photovoltaics
- High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition
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- Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
- (2009) Pierre Saint-Cast et al. APPLIED PHYSICS LETTERS
- Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide
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- (2008) H. Jin et al. APPLIED PHYSICS LETTERS
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