Effect of boron concentration on recombination at the p-Si–Al2O3 interface

Title
Effect of boron concentration on recombination at the p-Si–Al2O3 interface
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 9, Pages 093707
Publisher
AIP Publishing
Online
2014-03-08
DOI
10.1063/1.4867643

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