Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3

Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices

(2011) J. R. Weber et al.   JOURNAL OF APPLIED PHYSICS

Electronic and chemical properties of the c-Si/Al2O3 interface

(2011) Florian Werner et al.   JOURNAL OF APPLIED PHYSICS

High-Speed Spatial Atomic-Layer Deposition of Aluminum Oxide Layers for Solar Cell Passivation

(2010) Paul Poodt et al.   ADVANCED MATERIALS

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3]

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition

(2009) Shinsuke Miyajima et al.   Applied Physics Express

Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

(2009) Pierre Saint-Cast et al.   APPLIED PHYSICS LETTERS

Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3Films

(2009) Xiao Hai-Qing et al.   CHINESE PHYSICS LETTERS

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

(2009) G. Dingemans et al.   JOURNAL OF APPLIED PHYSICS

Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide

(2009) Tsu-Tsung Li et al.   Physica Status Solidi-Rapid Research Letters

Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition

(2009) G. Dingemans et al.   Physica Status Solidi-Rapid Research Letters

Chemical deposition of Al2O3 thin films on Si substrates

(2009) P. Vitanov et al.   THIN SOLID FILMS

Silicon surface passivation by atomic layer deposited Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Effective work functions for ionic and electronic emissions from mono- and polycrystalline surfaces

(2008) Hiroyuki Kawano   PROGRESS IN SURFACE SCIENCE