The effect of boron diffusions on the defect density and recombination at the (111) silicon-silicon oxide interface

Published 2008 View Full Article

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Title
The effect of boron diffusions on the defect density and recombination at the (111) silicon-silicon oxide interface
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 12, Pages 122109
Publisher
AIP Publishing
Online
2008-03-27
DOI
10.1063/1.2903698

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