标题
Effect of boron concentration on recombination at the p-Si–Al2O3 interface
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 9, Pages 093707
出版商
AIP Publishing
发表日期
2014-03-08
DOI
10.1063/1.4867643
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Empirical determination of the energy band gap narrowing in highly doped n+ silicon
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