Journal
APPLIED PHYSICS EXPRESS
Volume 4, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/APEX.4.125701
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Funding
- Semiconductor Research Corporation Focus Center on Materials Structures and Devices (MSD)
- Nanoelectronics Research Initiative (NRI)
- National Institute of Standards and Technology (NIST) through the Midwest Institute for Nanoelectronics Discovery (MIND)
- National Science Foundation (NSF) under ECCS [0925844]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0925844] Funding Source: National Science Foundation
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The interfacial reactions between atomic layer deposited Al2O3 films on various chemically treated InP(100) surfaces have been investigated by in situ X-ray photoelectron spectroscopy at each half cycle in the deposition process. With the first cycle of trimethyl aluminum, a significant decrease in the amount of indium oxides present on the surface is seen, consistent with the clean up'' effect reported for other III-V semiconductor surfaces. However, a concurrent increase in the amount of phosphorous oxide is seen, suggesting oxygen transfer from indium oxides to phosphorous during indium oxide decomposition. (C) 2011 The Japan Society of Applied Physics
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