HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

Title
HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 6, Pages 062908
Publisher
AIP Publishing
Online
2010-08-11
DOI
10.1063/1.3475015

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