Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric

Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al$_{2}$O$_{3}$ Overlayer and its Electric Properties

(2012) Makoto Kasu et al.   Applied Physics Express

Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond

(2012) J. W. Liu et al.   APPLIED PHYSICS LETTERS

Development of AlN/diamond heterojunction field effect transistors

(2012) Masataka Imura et al.   DIAMOND AND RELATED MATERIALS

Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al$_{2}$O$_{3}$ Passivation Layer

(2012) Kazuyuki Hirama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces

(2012) Robert Edgington et al.   JOURNAL OF APPLIED PHYSICS

High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

(2011) George Adamopoulos et al.   ADVANCED MATERIALS

Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions

(2011) D A J Moran et al.   IEEE ELECTRON DEVICE LETTERS

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

(2011) Takeyasu Saito et al.   JOURNAL OF ELECTRONIC MATERIALS

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

(2011) Y.C. Chang et al.   MICROELECTRONIC ENGINEERING

Properties of Hydrogen Terminated Diamond as a Photocathode

(2011) J. D. Rameau et al.   PHYSICAL REVIEW LETTERS

High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface

(2010) Kazuyuki Hirama et al.   Applied Physics Express

Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces

(2010) Yoontae Hwang et al.   APPLIED PHYSICS LETTERS

Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance

(2008) K. Hirama et al.   APPLIED PHYSICS LETTERS

Surface-channel MESFET with boron-doped contact layer

(2007) D. Kueck et al.   DIAMOND AND RELATED MATERIALS