Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

Characterization of high-κ LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

(2011) Shu Yang et al.   APPLIED PHYSICS LETTERS

High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition

(2011) Flora M. Li et al.   APPLIED PHYSICS LETTERS

Physical and electrical characteristics of the high-k Ta2O5 (tantalum pentoxide) dielectric deposited on the polycrystalline silicon

(2010) Chyuan-Haur Kao et al.   APPLIED PHYSICS LETTERS

Improved ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin film on single crystal diamond using CaF2 layer

(2010) Meiyong Liao et al.   APPLIED PHYSICS LETTERS

Fabrication and electrical properties of SrTiO3/diamond junctions

(2010) Guang-chao Chen et al.   DIAMOND AND RELATED MATERIALS

Status review of the science and technology of ultrananocrystalline diamond (UNCD™) films and application to multifunctional devices

(2010) Orlando Auciello et al.   DIAMOND AND RELATED MATERIALS

Integration of (PbZr0.52Ti0.48O3) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor

(2009) Meiyong Liao et al.   APPLIED PHYSICS LETTERS

Gate interfacial layer in hydrogen-terminated diamond field-effect transistors

(2008) Makoto Kasu et al.   DIAMOND AND RELATED MATERIALS