Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric

(2013) J. W. Liu et al.   APPLIED PHYSICS LETTERS

Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al$_{2}$O$_{3}$ Overlayer and its Electric Properties

(2012) Makoto Kasu et al.   Applied Physics Express

Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond

(2012) J. W. Liu et al.   APPLIED PHYSICS LETTERS

Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

(2012) Shaoheng Cheng et al.   APPLIED PHYSICS LETTERS

Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al$_{2}$O$_{3}$ Passivation Layer

(2012) Kazuyuki Hirama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces

(2012) Robert Edgington et al.   JOURNAL OF APPLIED PHYSICS

Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond

(2011) M. T. Edmonds et al.   APPLIED PHYSICS LETTERS

Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions

(2011) D A J Moran et al.   IEEE ELECTRON DEVICE LETTERS

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

(2011) Takeyasu Saito et al.   JOURNAL OF ELECTRONIC MATERIALS

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

(2011) Y.C. Chang et al.   MICROELECTRONIC ENGINEERING

Demonstration of diamond field effect transistors by AlN/diamond heterostructure

(2011) Masataka Imura et al.   Physica Status Solidi-Rapid Research Letters

Properties of Hydrogen Terminated Diamond as a Photocathode

(2011) J. D. Rameau et al.   PHYSICAL REVIEW LETTERS

High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface

(2010) Kazuyuki Hirama et al.   Applied Physics Express

Electronic structures of c-plane and a-plane AlN/ZnO heterointerfaces determined by synchrotron radiation photoemission spectroscopy

(2010) J. W. Liu et al.   APPLIED PHYSICS LETTERS

HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

(2010) G. He et al.   APPLIED PHYSICS LETTERS

Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy

(2010) Xiaoqing Xu et al.   JOURNAL OF APPLIED PHYSICS

Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy

(2009) Masataka Imura et al.   JOURNAL OF CRYSTAL GROWTH

Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance

(2008) K. Hirama et al.   APPLIED PHYSICS LETTERS

Surface-channel MESFET with boron-doped contact layer

(2007) D. Kueck et al.   DIAMOND AND RELATED MATERIALS