High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface

Published 2010 View Full Article

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Title
High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface
Authors
Keywords
-
Journal
Applied Physics Express
Volume 3, Issue 4, Pages 044001
Publisher
IOP Publishing
Online
2010-03-24
DOI
10.1143/apex.3.044001

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