Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

III-Nitride Photonics

(2012) Nelson Tansu et al.   IEEE Photonics Journal

222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties

(2010) Hideki Hirayama et al.   Applied Physics Express

Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

(2010) V. N. Jmerik et al.   APPLIED PHYSICS LETTERS

Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode

(2010) Harumasa Yoshida et al.   APPLIED PHYSICS LETTERS

Current-induced degradation of high performance deep ultraviolet light emitting diodes

(2010) Craig G. Moe et al.   APPLIED PHYSICS LETTERS

Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation

(2010) Yoshitaka Taniyasu et al.   APPLIED PHYSICS LETTERS

Demonstration of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on High-Quality AlN Templates

(2010) Yusuke Sakai et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Optical gain characteristics of staggered InGaN quantum wells lasers

(2010) Hongping Zhao et al.   JOURNAL OF APPLIED PHYSICS

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

(2010) Hongping Zhao et al.   SOLID-STATE ELECTRONICS

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

(2009) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

(2009) Hongping Zhao et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses

(2009) Yik-Khoon Ee et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire

(2009) Yik-Khoon Ee et al.   JOURNAL OF CRYSTAL GROWTH

AlGaN-based laser diodes for the short-wavelength ultraviolet region

(2009) Harumasa Yoshida et al.   NEW JOURNAL OF PHYSICS

Theoretical study of optical properties in deep ultraviolet Al-rich AlGaN/AIN quantum wells

(2009) S H Park   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

(2008) Ronald A Arif et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

(2008) Hongping Zhao et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers

(2008) Hongping Zhao et al.   JOURNAL OF APPLIED PHYSICS