Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
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Title
Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 9, Pages 093715
Publisher
AIP Publishing
Online
2011-11-10
DOI
10.1063/1.3658246
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