Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications

(2009) D. Hoogeland et al.   JOURNAL OF APPLIED PHYSICS

Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition

(2009) G. Dingemans et al.   Physica Status Solidi-Rapid Research Letters

Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy

(2009) J.J.H. Gielis et al.   THIN SOLID FILMS

Negative charge and charging dynamics in Al[sub 2]O[sub 3] films on Si characterized by second-harmonic generation

(2008) J. J. H. Gielis et al.   JOURNAL OF APPLIED PHYSICS

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Optical second-harmonic generation in thin film systems

(2008) J. J. H. Gielis et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Real-time study ofa−Si:H∕c−Siheterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation

(2008) J. J. H. Gielis et al.   PHYSICAL REVIEW B