Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Role of hydrogen in the surface passivation of crystalline silicon by sputtered aluminum oxide

(2010) Tsu-Tsung Andrew Li et al.   PROGRESS IN PHOTOVOLTAICS

High Efficiency Silicon Solar Cells with Bilayer Passivation Structure

(2009) W. C. Sun et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

(2009) G. Dingemans et al.   JOURNAL OF APPLIED PHYSICS

Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition

(2009) G. Dingemans et al.   Physica Status Solidi-Rapid Research Letters

Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature

(2008) Manav Sheoran et al.   APPLIED PHYSICS LETTERS

Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3

(2008) S. B. S. Heil et al.   JOURNAL OF APPLIED PHYSICS

Negative charge and charging dynamics in Al[sub 2]O[sub 3] films on Si characterized by second-harmonic generation

(2008) J. J. H. Gielis et al.   JOURNAL OF APPLIED PHYSICS

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS