Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks

Origin of electric dipoles formed at high-k/SiO2 interface

(2009) Koji Kita et al.   APPLIED PHYSICS LETTERS

Band offsets and work function control in field effect transistors

(2009) John Robertson   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Reaction of barium oxide threshold voltage tuning layers with SiO2 and HfO2∕SiO2 gate dielectrics

(2008) M. Copel   APPLIED PHYSICS LETTERS

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

(2008) P. D. Kirsch et al.   APPLIED PHYSICS LETTERS

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

(2008) Kunihiko Iwamoto et al.   APPLIED PHYSICS LETTERS

Effects of aluminum incorporation on band alignment at theSiO2∕HfO2interface

(2008) Onise Sharia et al.   PHYSICAL REVIEW B

Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes

(2007) Huang-Chun Wen et al.   MICROELECTRONIC ENGINEERING