Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices

(2011) Federico Nardi et al.   IEEE ELECTRON DEVICE LETTERS

Crossbar Logic Using Bipolar and Complementary Resistive Switches

(2011) R. Rosezin et al.   IEEE ELECTRON DEVICE LETTERS

Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM

(2011) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament diffusion model for simulating reset and retention processes in RRAM

(2011) S. Larentis et al.   MICROELECTRONIC ENGINEERING

Resistive switching characteristics of ultra-thin TiOx

(2011) Jubong Park et al.   MICROELECTRONIC ENGINEERING

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Thermochemical resistive switching: materials, mechanisms, and scaling projections

(2011) Daniele Ielmini et al.   PHASE TRANSITIONS

Resistance switching for RRAM applications

(2011) Frederick T. Chen et al.   Science China-Information Sciences

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Reset–Set Instability in Unipolar Resistive-Switching Memory

(2010) Daniele Ielmini   IEEE ELECTRON DEVICE LETTERS

Pulse-Programming Instabilities of Unipolar-Type NiOx

(2010) Deok-Kee Kim et al.   IEEE ELECTRON DEVICE LETTERS

Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

(2010) D. Ielmini et al.   IEEE ELECTRON DEVICE LETTERS

$\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current

(2010) Yi Wu et al.   IEEE ELECTRON DEVICE LETTERS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Memory Devices: Energy–Space–Time Tradeoffs

(2010) Victor V. Zhirnov et al.   PROCEEDINGS OF THE IEEE

Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories

(2010) F. Nardi et al.   SOLID-STATE ELECTRONICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistance transition in metal oxides induced by electronic threshold switching

(2009) D. Ielmini et al.   APPLIED PHYSICS LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE