Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices

Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

(2011) D. Ielmini et al.   JOURNAL OF APPLIED PHYSICS

Reset–Set Instability in Unipolar Resistive-Switching Memory

(2010) Daniele Ielmini   IEEE ELECTRON DEVICE LETTERS

Pulse-Programming Instabilities of Unipolar-Type NiOx

(2010) Deok-Kee Kim et al.   IEEE ELECTRON DEVICE LETTERS

Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

(2010) D. Ielmini et al.   IEEE ELECTRON DEVICE LETTERS

Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories

(2010) F. Nardi et al.   SOLID-STATE ELECTRONICS

Resistance transition in metal oxides induced by electronic threshold switching

(2009) D. Ielmini et al.   APPLIED PHYSICS LETTERS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells

(2009) Ludovic Goux et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode

(2008) M. Yin et al.   IEEE ELECTRON DEVICE LETTERS

Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET

(2008) Yoshihiro Sato et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES