On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes

Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon

(2013) S. Jahangir et al.   APPLIED PHYSICS LETTERS

Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes

(2013) Hieu Pham Trung Nguyen et al.   NANO LETTERS

On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping

(2013) Shaofei Zhang et al.   AIP Advances

Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires

(2012) C. Pfüller et al.   APPLIED PHYSICS LETTERS

High efficiency ultraviolet emission from AlxGa1−xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy

(2012) Q. Wang et al.   APPLIED PHYSICS LETTERS

Effects of Strains and Defects on the Internal Quantum Efficiency of InGaN/GaN Nanorod Light Emitting Diodes

(2012) Chun-Hsiang Chang et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes

(2012) Hieu Pham Trung Nguyen et al.   NANO LETTERS

Effects of reduced exciton diffusion in InGaN/GaN multiple quantum well nanorods

(2012) Bin Jiang et al.   OPTICS EXPRESS

Core-shell InGaN nanorod light emitting diodes: Electronic and optical device properties

(2012) Christopher Kölper et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires

(2011) Lee Baird et al.   APPLIED PHYSICS LETTERS

Transient surface photovoltage in n- and p-GaN as probed by x-ray photoelectron spectroscopy

(2011) Hikmet Sezen et al.   APPLIED PHYSICS LETTERS

Temperature-dependence of the internal efficiency droop in GaN-based diodes

(2011) J. Hader et al.   APPLIED PHYSICS LETTERS

Reduced Joule heating in nanowires

(2011) François Léonard   APPLIED PHYSICS LETTERS

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

High-Efficiency InGaN/GaN Dot-in-a-Wire Red Light-Emitting Diodes

(2011) Hieu Pham Trung Nguyen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Surface-induced effects in GaN nanowires

(2011) Raffaella Calarco et al.   JOURNAL OF MATERIALS RESEARCH

p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)

(2011) H. P. T. Nguyen et al.   NANO LETTERS

Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics

(2011) Wei Guo et al.   NANO LETTERS

First-principles studies on structural and electronic properties of GaN–AlN heterostructure nanowires

(2011) Haijun Zhang et al.   Nanoscale

Electron leakage effects on GaN-based light-emitting diodes

(2011) Joachim Piprek et al.   OPTICAL AND QUANTUM ELECTRONICS

Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers

(2011) Anne-Line Henneghien et al.   OPTICS EXPRESS

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

(2011) Qiming Li et al.   OPTICS EXPRESS

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

GaN nanowire surface state observed using deep level optical spectroscopy

(2010) A. Armstrong et al.   APPLIED PHYSICS LETTERS

High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)

(2010) Y.-L. Chang et al.   APPLIED PHYSICS LETTERS

Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

(2010) Hiroto Sekiguchi et al.   APPLIED PHYSICS LETTERS

Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy

(2010) N. A. Sanford et al.   JOURNAL OF APPLIED PHYSICS

Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

(2010) Wei Guo et al.   NANO LETTERS

High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes

(2010) Liang-Yi Chen et al.   OPTICS EXPRESS

Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

(2009) Sang-Heon Han et al.   APPLIED PHYSICS LETTERS

Surface potential of n- and p-type GaN measured by Kelvin force microscopy

(2008) S. Barbet et al.   APPLIED PHYSICS LETTERS

Unusually low thermal conductivity of gallium nitride nanowires

(2008) Csaba Guthy et al.   JOURNAL OF APPLIED PHYSICS

Surface depletion effects in semiconducting nanowires

(2008) B. S. Simpkins et al.   JOURNAL OF APPLIED PHYSICS

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

(2008) John B. Schlager et al.   JOURNAL OF APPLIED PHYSICS

Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

(2008) J. Senawiratne et al.   JOURNAL OF ELECTRONIC MATERIALS