Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy

GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements

(2009) L. M. Mansfield et al.   JOURNAL OF ELECTRONIC MATERIALS

MESFETs Made From Individual GaN Nanowires

(2008) P.T. Blanchard et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

(2008) John B. Schlager et al.   JOURNAL OF APPLIED PHYSICS

Depletion-Mode Photoconductivity Study of Deep Levels in GaN Nanowires

(2008) A. Armstrong et al.   JOURNAL OF ELECTRONIC MATERIALS

Tantalum Nitride Atomic Layer Deposition Using (tert-Butylimido)tris(diethylamido)tantalum and Hydrazine

(2008) B. B. Burton et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements

(2008) T. Richter et al.   NANO LETTERS

Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy

(2008) Hiroto Sekiguchi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE