On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes
出版年份 2014 全文链接
标题
On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes
作者
关键词
-
出版物
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 50, Issue 6, Pages 483-490
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2014-04-17
DOI
10.1109/jqe.2014.2317732
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon
- (2013) S. Jahangir et al. APPLIED PHYSICS LETTERS
- Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes
- (2013) Hieu Pham Trung Nguyen et al. NANO LETTERS
- On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping
- (2013) Shaofei Zhang et al. AIP Advances
- Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires
- (2012) C. Pfüller et al. APPLIED PHYSICS LETTERS
- High efficiency ultraviolet emission from AlxGa1−xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy
- (2012) Q. Wang et al. APPLIED PHYSICS LETTERS
- Effects of Strains and Defects on the Internal Quantum Efficiency of InGaN/GaN Nanorod Light Emitting Diodes
- (2012) Chun-Hsiang Chang et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes
- (2012) Hieu Pham Trung Nguyen et al. NANO LETTERS
- Effects of reduced exciton diffusion in InGaN/GaN multiple quantum well nanorods
- (2012) Bin Jiang et al. OPTICS EXPRESS
- Core-shell InGaN nanorod light emitting diodes: Electronic and optical device properties
- (2012) Christopher Kölper et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires
- (2011) Lee Baird et al. APPLIED PHYSICS LETTERS
- Transient surface photovoltage in n- and p-GaN as probed by x-ray photoelectron spectroscopy
- (2011) Hikmet Sezen et al. APPLIED PHYSICS LETTERS
- Temperature-dependence of the internal efficiency droop in GaN-based diodes
- (2011) J. Hader et al. APPLIED PHYSICS LETTERS
- Reduced Joule heating in nanowires
- (2011) François Léonard APPLIED PHYSICS LETTERS
- Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes
- (2011) David S. Meyaard et al. APPLIED PHYSICS LETTERS
- High-Efficiency InGaN/GaN Dot-in-a-Wire Red Light-Emitting Diodes
- (2011) Hieu Pham Trung Nguyen et al. IEEE PHOTONICS TECHNOLOGY LETTERS
- Surface-induced effects in GaN nanowires
- (2011) Raffaella Calarco et al. JOURNAL OF MATERIALS RESEARCH
- p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)
- (2011) H. P. T. Nguyen et al. NANO LETTERS
- Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics
- (2011) Wei Guo et al. NANO LETTERS
- First-principles studies on structural and electronic properties of GaN–AlN heterostructure nanowires
- (2011) Haijun Zhang et al. Nanoscale
- Electron leakage effects on GaN-based light-emitting diodes
- (2011) Joachim Piprek et al. OPTICAL AND QUANTUM ELECTRONICS
- Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers
- (2011) Anne-Line Henneghien et al. OPTICS EXPRESS
- Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays
- (2011) Qiming Li et al. OPTICS EXPRESS
- Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
- (2011) Hongping Zhao et al. OPTICS EXPRESS
- GaN nanowire surface state observed using deep level optical spectroscopy
- (2010) A. Armstrong et al. APPLIED PHYSICS LETTERS
- High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)
- (2010) Y.-L. Chang et al. APPLIED PHYSICS LETTERS
- Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
- (2010) Hiroto Sekiguchi et al. APPLIED PHYSICS LETTERS
- Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
- (2010) N. A. Sanford et al. JOURNAL OF APPLIED PHYSICS
- Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
- (2010) Wei Guo et al. NANO LETTERS
- High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes
- (2010) Liang-Yi Chen et al. OPTICS EXPRESS
- Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes
- (2009) Sang-Heon Han et al. APPLIED PHYSICS LETTERS
- Surface potential of n- and p-type GaN measured by Kelvin force microscopy
- (2008) S. Barbet et al. APPLIED PHYSICS LETTERS
- Unusually low thermal conductivity of gallium nitride nanowires
- (2008) Csaba Guthy et al. JOURNAL OF APPLIED PHYSICS
- Surface depletion effects in semiconducting nanowires
- (2008) B. S. Simpkins et al. JOURNAL OF APPLIED PHYSICS
- Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy
- (2008) John B. Schlager et al. JOURNAL OF APPLIED PHYSICS
- Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes
- (2008) J. Senawiratne et al. JOURNAL OF ELECTRONIC MATERIALS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now