On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping

On the Efficiency Decrease of the GaN Light-Emitting Nanorod Arrays

(2013) Liang-Yi Chen et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Reduced longitudinal optical phonon-exciton interaction in InGaN/GaN nanorod structures

(2012) P. Renwick et al.   APPLIED PHYSICS LETTERS

An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes

(2012) Jiaxing Wang et al.   JOURNAL OF APPLIED PHYSICS

Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes

(2012) Hieu Pham Trung Nguyen et al.   NANO LETTERS

Core-shell InGaN nanorod light emitting diodes: Electronic and optical device properties

(2012) Christopher Kölper et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Temperature-dependence of the internal efficiency droop in GaN-based diodes

(2011) J. Hader et al.   APPLIED PHYSICS LETTERS

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)

(2011) H. P. T. Nguyen et al.   NANO LETTERS

Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics

(2011) Wei Guo et al.   NANO LETTERS

Electron leakage effects on GaN-based light-emitting diodes

(2011) Joachim Piprek et al.   OPTICAL AND QUANTUM ELECTRONICS

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

(2011) Qiming Li et al.   OPTICS EXPRESS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes

(2010) Liang-Yi Chen et al.   OPTICS EXPRESS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Temperature Dependence of Radiative and Auger Losses in Quantum Wells

(2008) JÖrg Hader et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS