Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon

Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon

(2012) Hieu Pham Trung Nguyen et al.   NANOTECHNOLOGY

Barrier height of Pt–InxGa1−xN (0≤x≤0.5) nanowire Schottky diodes

(2011) Wei Guo et al.   APPLIED PHYSICS LETTERS

InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon

(2011) Wei Guo et al.   APPLIED PHYSICS LETTERS

Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics

(2011) Wei Guo et al.   NANO LETTERS

Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon

(2011) Hieu Pham Trung Nguyen et al.   NANOTECHNOLOGY

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

(2010) Qi Dai et al.   APPLIED PHYSICS LETTERS

Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy

(2010) N. A. Sanford et al.   JOURNAL OF APPLIED PHYSICS

Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

(2010) Wei Guo et al.   NANO LETTERS

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

(2010) Caroline Chèze et al.   Nano Research

Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting

(2009) Yuh-Renn Wu et al.   JOURNAL OF APPLIED PHYSICS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

(2008) John B. Schlager et al.   JOURNAL OF APPLIED PHYSICS