Article
Engineering, Electrical & Electronic
Mengyuan Hua, Chengcai Wang, Junting Chen, Junlei Zhao, Song Yang, Li Zhang, Zheyang Zheng, Jin Wei, Kevin J. Chen
Summary: In this study, the gate leakage mechanisms of E-mode p-n junction/AlGaN/GaN HEMTs were investigated. It was found that the intrinsic gate leakage is limited by the transport of holes through the p-GaN layer, and lateral leakage current as well as the role of variable hopping process (VRH) were also discussed. Gate leakage current models based on these mechanisms were able to quantitatively replicate the gate-leakage behavior across the entire relevant range of gate biases and temperatures.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Mirko Rocci, Dhavala Suri, Akashdeep Kamra, Gilvania Vilela, Yota Takamura, Norbert M. Nemes, Jose L. Martinez, Mar Garcia Hernandez, Jagadeesh S. Moodera
Summary: This study demonstrates an enhancement of up to 30% in critical current in NbN micro- and nano superconducting bridges through the proposed mechanism of surface nucleation and pinning of Abrikosov vortices. The work also shows an infinite electroresistance and hysteretic resistance dependent on an applied electric field, indicating a potential for field-driven enhancement in superconducting properties and its application in low-dissipation digital computing.
Article
Physics, Applied
A. Fereidouni, M. H. Doha, K. Pandey, R. Basnet, J. Hu, H. O. H. Churchill
Summary: Current annealing is demonstrated as an effective method to significantly improve electronic transport properties of 2D topological semimetal flakes, leading to enhancements in contact resistance, resistivity, carrier mobility, and observation of quantum oscillations. The improved transport properties are attributed to a thermal process, with minimal changes in phonon modes and Fermi surface area.
APPLIED PHYSICS LETTERS
(2022)
Article
Computer Science, Hardware & Architecture
Nisarga Chand, Sarosij Adak, S. K. Swain, Sudhansu Mohan Biswal, A. Sarkar
Summary: This study investigates the influence of AlGaN back-barrier (BB) on In0.17Al0.83N/AlN/GaN HEMT devices and finds that the use of AlGaN BB can improve SCEs and increase the threshold voltage. This may provide an alternative solution for high power and digital switching devices.
COMPUTERS & ELECTRICAL ENGINEERING
(2022)
Article
Engineering, Electrical & Electronic
Kushagra Bhatheja, Xiankun Jin, Matthew Strong, Degang Chen
Summary: The extensive use of electronic components in critical applications has raised reliability concerns in VLSI, highlighting the importance of on-chip monitoring and characterization of ageing-related reliability effects. This brief presents a fast, large dynamic range, monolithic gate current monitor that can characterize and monitor Time Dependent Dielectric Breakdown (TDDB) without the need for an explicit ADC.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
(2021)
Article
Materials Science, Multidisciplinary
Andrew M. Thron, Jianyi Gao, Burcu Ercan, Matthew A. Laurent, Srabanti Chowdhury, Klaus van Benthem
Summary: The study reveals that the growth of oxide layers in InAlN films is initially reaction limited and then becomes diffusion limited after reaching a certain thickness. With increasing annealing time, the growing oxide layers become amorphous and porous.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Xin Li, Yao Sun, Li Jiang, Shiming Xie, Yonglu Liu, Mei Su
Summary: A new carrier-based modulation scheme is proposed in this study to reduce the leakage current in the transformer-less split-capacitor four-wire current source inverter. The scheme effectively decreases the common mode voltage and conducted interference, and its effectiveness is validated by experimental results.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Sujan Sarkar, Ramdas P. Khade, Ajay Shanbhag, Nandita DasGupta, Amitava DasGupta
Summary: This work presents a comparative study of the subthreshold swing (SS) in InAlN/GaN-based high electron mobility transistor (HEMT), with and without carbon doping in the buffer layer. It is observed that devices with carbon-doped (C-doped) buffer exhibit near-ideal SS over a wide range of drain voltage for both up and downsweep. TCAD simulation shows that the C-doped buffer layer reduces reverse-biased gate leakage current and the overall capacitance, resulting in improved SS.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Multidisciplinary
N. M. S. Tawfik, A. Shaker, I. Sayed, H. Kamel, M. S. Salem, M. Dessouky, M. Fedawy
Summary: This paper investigates the gate leakage current in double gate tunneling field-effect transistors (TFETs) and proposes a semi-numerical method for analysis. The results show that the image charge barrier lowering effect has a significant influence on the gate tunneling current.
ALEXANDRIA ENGINEERING JOURNAL
(2023)
Article
Computer Science, Information Systems
Aleksey Udovichenko, Sergey Brovanov, Evgeny Grishanov, Svetlana M. Stennikova
Summary: Renewable energy-based power generation systems are becoming increasingly popular, with many researchers focusing on the problem. This paper discusses a grid-tied transformerless PV generation system based on a multilevel converter, utilizing space vector pulse-width modulation to suppress or reduce common-mode leakage current. Experimental results confirmed a significant decrease in common-mode leakage current, suggesting the potential for using these devices in transformerless generation systems.
Article
Engineering, Electrical & Electronic
Hao Jin, Qimeng Jiang, Sen Huang, Xinhua Wang, Yingjie Wang, Zhongchen Ji, Xinyue Dai, Chao Feng, Jie Fan, Ke Wei, Jianxun Liu, Yaozong Zhong, Qian Sun, Xinyu Liu
Summary: In this study, an enhancement-mode p-channel field-effect transistor based on GaN was demonstrated, which showed high current density and I-ON/I-OFF ratio. Through special process control and structure optimization, the influence of surface effects on the device performance was successfully overcome, providing strong support for the monolithic integration of GaN-based logic and power devices.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Peng Cui, Yuping Zeng
Summary: By optimizing the design and technology of InAlN/GaN HEMT, a record low off current, high on/off current ratio, and improved performance have been achieved on silicon substrate. Different gate structures can further enhance the device performance.
SOLID-STATE ELECTRONICS
(2021)
Article
Chemistry, Physical
Hanfei Zhu, Guoqiang Feng, Xiaolong Chen, Xiao Lang, Huali Liu, Jun Ouyang
Summary: In this study, Sol-gel-derived (100)-textured Pb0.8La0.1Ca0.1Ti0.75O3 (PLCT) thin films were prepared at 450 degrees C with annealing in different atmospheres. The films annealed in O-2 showed improved electrical properties and energy storage capacity, along with distinct leakage current characteristics. The results suggest great potential for high-performance dielectric capacitors with high energy density and efficiency.
JOURNAL OF PHYSICAL CHEMISTRY C
(2021)
Article
Engineering, Electrical & Electronic
Chenlu Wang, Qinglong Yan, Chunxu Su, Sami Alghamdi, Emad Ghandourah, Zhihong Liu, Xin Feng, Weihang Zhang, Kui Dang, Yingmin Wang, Jian Wang, Jincheng Zhang, Hong Zhou, Yue Hao
Summary: In this study, we have successfully developed β-Ga2O3 MOS-JFETs with low gate leakage current and large gate swing. The use of high-quality SiO2 layer above the P-NiOX/N-Ga2O3 heterojunction has resulted in a suppression of gate leakage current by over 6 orders of magnitudes compared to heterojunction FETs. Our device also exhibits strong thermal stability with an off-state drain current of approximately 10(-7) mA/mm at elevated temperature (200 degrees C). Additionally, a depletion-mode MOS-JFET with a source-to-drain spacing of 12μm demonstrates high breakdown voltage and specific on-resistance, delivering a high power figure of merit.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Linhua Huang, Yong Liu, Chao Xiao, Yixiao Ding, Xin Peng, Yuichi Onozawa, Takashi Tsuji, Naoto Fujishima, Johnny K. O. Sin
Summary: Annealing LaAlO3 at 700 degrees C in ALS gate stacks on 4H-SiC can improve breakdown effective electric field and reduce interface state density, making it a promising gate dielectric for SiC power MOS device applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Optics
Yide Zhang, Genevieve D. Vigil, Lina Cao, Aamir A. Khan, David Benirschke, Tahsin Ahmed, Patrick Fay, Scott S. Howard
Article
Nanoscience & Nanotechnology
Golnaz Karbasian, Michael S. McConnell, Alexei O. Orlov, Alexei N. Nazarov, Gregory L. Snider
Review
Chemistry, Multidisciplinary
Golnaz Karbasian, Michael S. McConnell, Hubert George, Louisa C. Schneider, Matthew J. Filmer, Alexei O. Orlov, Alexei N. Nazarov, Gregory L. Snider
APPLIED SCIENCES-BASEL
(2017)
Article
Physics, Applied
Thomas A. Zirkle, Rachel A. Bonek, Gregory L. Snider, Alexei O. Orlov
JOURNAL OF LOW TEMPERATURE PHYSICS
(2019)
Article
Physics, Applied
Matthew J. Filmer, Thomas A. Zirkle, Jonathan Chisum, Alexei O. Orlov, Gregory L. Snider
APPLIED PHYSICS LETTERS
(2020)
Review
Chemistry, Multidisciplinary
Thomas A. Zirkle, Matthew J. Filmer, Jonathan Chisum, Alexei O. Orlov, Eva Dupont-Ferrier, Joffrey Rivard, Matthew Huebner, Marc Sanquer, Xavier Jehl, Gregory L. Snider
APPLIED SCIENCES-BASEL
(2020)
Article
Multidisciplinary Sciences
Alexander M. Mintairov, Dmitrii Lebedev, Alexei S. Vlasov, Alexei O. Orlov, Gregory L. Snider, Steven A. Blundell
Summary: The proposal for fault-tolerant quantum computations is based on topological quantum field theories, relying on the existence of physical systems with non-Abelian topological terms. Overcoming obstacles in implementing these operations in potential material systems is crucial, and the novel system presented in the research shows promise for advancing the realization of topological quantum computing.
SCIENTIFIC REPORTS
(2021)
Proceedings Paper
Computer Science, Theory & Methods
Rene Celis-Cordova, Alexei O. Orlov, Gregory L. Snider, Tian Lu, Jason M. Kulick
2020 INTERNATIONAL CONFERENCE ON REBOOTING COMPUTING (ICRC 2020)
(2020)
Proceedings Paper
Engineering, Electrical & Electronic
Rene Celis-Cordova, Alexei O. Orlov, Gregory L. Snider
2020 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
(2020)
Article
Engineering, Electrical & Electronic
Heath McCabe, Scott Koziol, Gregory L. Snider, Enrique P. Blair
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2020)
Proceedings Paper
Computer Science, Theory & Methods
Rene Celis-Cordova, Alexei O. Orlov, Tian Lu, Jason M. Kulick, Gregory L. Snider
PROCEEDINGS OF THE 2019 FOURTH IEEE INTERNATIONAL CONFERENCE ON REBOOTING COMPUTING (ICRC)
(2019)
Proceedings Paper
Computer Science, Hardware & Architecture
P. Fay, W. Li, D. Digiovanni, L. Cao, H. Ilatikhameneh, F. Chen, T. Ameen, R. Rahman, G. Klimeck, C. Lund, S. Keller, S. M. Islam, A. Chaney, Y. Cho, D. Jena
2017 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2017)
(2017)
Article
Physics, Applied
Jingshan Wang, Chris Youtsey, Robert McCarthy, Rekha Reddy, Noah Allen, Louis Guido, Jinqiao Xie, Edward Beam, Patrick Fay
APPLIED PHYSICS LETTERS
(2017)
Article
Engineering, Electrical & Electronic
J. Fernandez-Berni, M. Niemier, X. S. Hu, H. Lu, W. Li, P. Fay, R. Carmona-Galan, A. Rodriguez-Vazquez
ELECTRONICS LETTERS
(2017)
Article
Engineering, Electrical & Electronic
Matthew J. Filmer, Gregory L. Snider, Alexei O. Orlov
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
(2018)