期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 7, 页码 988-990出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2196751
关键词
AlN; cutoff frequency; f(T); GaN; high-electron-mobility transistor (HEMT); InAlN; molecular beam epitaxy (MBE); regrown ohmic contacts; transistor
资金
- Defense Advanced Research Projects Agency [HR0011-10-C-0015]
- Air Force Office of Scientific Research
We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency (f(T)) of 370 GHz. The HEMT without back barrier exhibits an extrinsic transconductance (g(m. ext)) of 650 mS/mm and an on/off current ratio of 10(6) owing to the incorporation of dielectric-free passivation and regrown ohmic contacts with a contact resistance of 0.16 Omega . mm. Delay analysis suggests that the high f(T) is a result of low gate-drain parasitics associated with the rectangular gate. Although it appears possible to reach 500-GHz f(T) by further reducing the gate length, it is imperative to investigate alternative structures that offer higher mobility/velocity while keeping the best possible electrostatic control in ultrascaled geometry.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据