205-GHz (Al,In)N/GaN HEMTs

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With ${F}_{ \rm T} = \hbox{144}\ \hbox{GHz}$

(2010) Haifeng Sun et al.   IEEE ELECTRON DEVICE LETTERS

Low-Noise Microwave Performance of 0.1 $\mu$m Gate AlInN/GaN HEMTs on SiC

(2010) Haifeng Sun et al.   IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure

(2009) Lin Zhou et al.   APPLIED PHYSICS LETTERS

Evaluation of GaN HEMT degradation by means of pulsed I–V, leakage and DLTS measurements

(2009) A. Chini et al.   ELECTRONICS LETTERS

Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields

(2009) L. Ardaravičius et al.   JOURNAL OF APPLIED PHYSICS

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

(2009) J. Kuzmik et al.   JOURNAL OF APPLIED PHYSICS

Physical degradation of GaN HEMT devices under high drain bias reliability testing

(2009) S.Y. Park et al.   MICROELECTRONICS RELIABILITY

InAlN-barrier HFETs with GaN and InGaN channels

(2009) J. Liberis et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz

(2008) Masataka Higashiwaki et al.   Applied Physics Express

Barrier-Layer Scaling of InAlN/GaN HEMTs

(2008) F. Medjdoub et al.   IEEE ELECTRON DEVICE LETTERS