Article
Engineering, Electrical & Electronic
Shumiao Zhang, Juan Wang, Qi Li, Guoqing Shao, Genqiang Chen, Shi He, Ruozheng Wang, Wei Wang, Renan Bu, Feng Wen, Hong-Xing Wang
Summary: The current-voltage and current-voltage-temperature characteristics of diamond MIS-SBD with SnO2 insulating layer were studied. It was found that the MIS-SBD showed more stable barrier height and ideality factor as temperature increased, and the breakdown voltage increased from 102 to 123 V.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
Wei Mao, Shihao Xu, Haiyong Wang, Cui Yang, Shenglei Zhao, Jiabo Chen, Yachao Zhang, Chunfu Zhang, Jincheng Zhang, Yue Hao
Summary: The treatment of oxygen plasma has a positive impact on the performance of recessed AlGaN/GaN Schottky barrier diodes, as it reduces current collapse by forming a thin oxide layer, but it also results in a relatively more inhomogeneous barrier height.
APPLIED PHYSICS EXPRESS
(2022)
Article
Chemistry, Physical
Arslane Hatem Kacha, Macho Anani, Boudali Akkal, Zineb Benamara, Guillaume Monier, Hussein Mehdi, Christelle Varenne, Amadou Ndiaye, Christine Robert-Goumet
Summary: Au/GaN/n-GaAs Schottky Barrier Diodes were prepared by N-2 plasma Nitridation, with the GaN interfacial layer improving the electrical quality of the devices, reducing the ideality factor n, and serving as passivation for the GaAs surface.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
Liang Sun, Lifeng Zhu, Chunli Zhang, Weiqiu Chen, Zhonglin Wang
Summary: This study utilizes flexoelectricity to control the performance of silicon-based SBDs, finding significant impact on various performance indicators. Current-voltage characteristics of the SBD under different tip forces were measured using C-AFM, confirming the important role of flexoelectricity.
Article
Physics, Applied
Biplab Sarkar, Jia Wang, Oves Badami, Tanmoy Pramanik, Woong Kwon, Hirotaka Watanabe, Hiroshi Amano
Summary: In this study, a low-cost physical vapor deposition of Mg followed by a thermal diffusion annealing process was used to increase the effective barrier height at the metal/Ga-polar GaN Schottky interface. As a result, GaN Camel diodes with improved barrier height and turn-on voltage were achieved for the first time compared to regular GaN Schottky barrier diodes.
APPLIED PHYSICS EXPRESS
(2023)
Article
Chemistry, Physical
Jung-Suk Cha, Tae-Ju Lee, Tae-Yeon Seong
Summary: High barrier height Schottky contacts were achieved on semipolar (20-21) n-GaN using a NiZn solid solution layer. Annealing at 650 degrees C led to the formation of Ni-oxides and N-gallide phases, with improved reverse leakage characteristics and Schottky barrier heights observed with increasing annealing temperature. Dependence of the Schottky barrier heights on annealing temperature was described based on XRD, STEM, and XPS analyses.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
Jiabo Chen, Zhaoke Bian, Zhihong Liu, Dan Zhu, Xiaoling Duan, Yinhe Wu, Yanqing Jia, Jing Ning, Jincheng Zhang, Yue Hao
Summary: The current conduction mechanisms of Mo/Au Schottky contacts on n-GaN with post metal annealing at different temperatures were investigated. Variations in barrier heights and an inhomogeneous distribution were observed, with interactions between Mo and GaN affecting the observed differences in Schottky barrier height under different annealing conditions.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Engineering, Electrical & Electronic
Junho Jang, Jaeman Song, Seung S. Lee, Sangkwon Jeong, Bong Jae Lee, Sanghyeon Kim
Summary: In this study, the current-voltage characteristics of Au/n-GaSb Schottky diodes were analyzed to investigate their current transport mechanisms at different temperatures. The study separated the measured I-V curves into thermionic emission current and secondary current, identifying the predominance between tunneling and SRH recombination currents. It was also revealed that other current transport mechanisms such as Auger and radiative recombination, and leakage currents are negligible for the Au/n-GaSb Schottky diodes in this work.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Physics, Condensed Matter
A. F. Ozdemir, T. Goksu, N. Yildirim, A. Turut
Summary: The thickness of Ti Schottky contact metal affects the barrier potential value, with a difference of 0.12 eV observed at 300 K between thicknesses of 50 nm and 100 nm. The ideality factor remains unchanged with increasing metal thickness.
PHYSICA B-CONDENSED MATTER
(2021)
Article
Engineering, Electrical & Electronic
Yuan-Lan Zhang, Pan Liu, Guang-Yin Lei, Qingchun J. Zhang
Summary: A tunable low Schottky barrier height (SBH) and an optimized device structure were achieved through effective rapid thermal annealing (RTA) methods and the use of trench-assisted stage-style p-type implants in the dead region of current flow, successfully resolving the leakage current issue.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Physical
Yuan Ren, Zhiyuan He, Bin Dong, Changan Wang, Zhaohui Zeng, Qixin Li, Zhitao Chen, Liuan Li, Ningyang Liu
Summary: This study focuses on the electrical properties of Ni/n-GaN Schottky barrier diodes fabricated on GaN bulk substrates with different crystal orientations. The results show that the crystal orientation of the GaN substrate has a significant impact on the Schottky barrier height, reverse leakage current, and barrier inhomogeneity of the devices.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Engineering, Electrical & Electronic
Guoqing Shao, Juan Wang, Zhangcheng Liu, Yanfeng Wang, Wei Wang, Hong-Xing Wang
Summary: Introducing LaB6 into diamond SBD can improve its SBH and reverse breakdown capability. LaB6 significantly reduces the interface states density of diamond SBD, showing great potential for higher performance.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Pubali Das, Baishakhi Pal, Mrinmay Das, Sayantan Sil, Dhananjoy Das, Animesh Layek, Partha Pratim Ray
Summary: This research investigates the temperature-dependent dynamical behavior of Schottky junction Al/rGO-SnO2 and reveals an anomalous change in the ideality factor and barrier height with increasing temperature. By assuming a Gaussian distribution of the barrier height with thermionic emission theory, the study provides an explanation for the discrepancy in the measurement of the Richardson constant in the junction.
RESULTS IN PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Sosorburam Boldbaatar, V. Janardhanam, Munkhsaikhan Zumuukhorol, Hoon-Ki Lee, Hae-Yong Lee, Hyo Jung Kim, Kyu-Hwan Shim, Chel-Jong Choi
Summary: We investigated Ni Schottky contacts on alpha-Ga2O3 epitaxial layers and studied their current-voltage characteristics at temperatures ranging from 100 to 425 K. The Ni/alpha-Ga2O3 Schottky diode showed excellent rectification with a high barrier height of 1.39 eV, a low leakage current of around 10-12 A, and a breakdown voltage of 215 V at room temperature. The temperature dependence of the barrier height and ideality factor indicated the presence of barrier inhomogeneity at the Schottky interface, with a transition occurring at 250 K.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Engineering, Electrical & Electronic
Ying Wang, Ke-Han Chen, Meng-Tian Bao, Xin-Xing Fei, Fei Cao
Summary: This article investigates Schottky diodes with pure W and W-C alloy metal electrodes. The electrical characteristics and thermal stability of W-C alloy diodes are found to be better than those of pure W diodes. The interface reaction between the metal and silicon carbide is effectively reduced, improving the barrier inhomogeneity of W-based Schottky diodes.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
