Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 5, Pages 422-425Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.919377
Keywords
GaN based; high-electron mobility transistors (HEMTs); InAlN barrier; microwave devices; scaling
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We discuss the characteristics of In0.17Al0.83N/GaN high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at V-G = +2.0 V) decreased with decreasing barrier thickness due to the gate forward drive limitation and residual surface-depletion effect. Full pinchoff and low leakage are observed. Even with 3-nm ultrathin barrier, the heterostructure and contacts are thermally highly stable (up to 1000 degrees C).
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