Evaluation of GaN HEMT degradation by means of pulsed I–V, leakage and DLTS measurements

Published 2009 View Full Article

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Title
Evaluation of GaN HEMT degradation by means of pulsed I–V, leakage and DLTS measurements
Authors
Keywords
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Journal
ELECTRONICS LETTERS
Volume 45, Issue 8, Pages 426
Publisher
Institution of Engineering and Technology (IET)
Online
2009-04-09
DOI
10.1049/el.2009.0533
References
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