期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 10, 页码 1364-1366出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2162087
关键词
AlInN/GaN; high-electron mobility transistor (HEMT); surface depletion
资金
- Swiss National Science Fonds [200021_132096]
- FIRST Laboratory
- Swiss National Science Foundation (SNF) [200021_132096] Funding Source: Swiss National Science Foundation (SNF)
We report the fabrication and characterization of 30-nm-gate fully passivated AlInN/GaN high-electron mobility transistors (HEMTs) with cutoff frequencies f(T) and f(MAX) simultaneously exceeding 200 GHz at a given bias point. The current gain cutoff frequency does not vary significantly for 2.5 < V-DS < 10 V, while f(MAX) reaches a maximum value of f(MAX) = 230 GHz at V-DS = 6 V. This is the first realization of fully passivated AlInN/GaN HEMTs with f(T)/f(MAX) >= 205 GHz, a performance enabled by the careful shaping of the gate electrode profile and the use of a thin 60-nm SiN encapsulation film.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据