Ballistic two-dimensional InSe transistors

Vertical MoS2 transistors with sub-1-nm gate lengths

(2022) Fan Wu et al.   NATURE

Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

(2022) Lei Liu et al.   NATURE

How to report and benchmark emerging field-effect transistors

(2022) Zhihui Cheng et al.   Nature Electronics

Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2

(2022) Zheng Sun et al.   ACS Nano

Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors

(2022) Carlo Gilardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High Current Density in Monolayer MoS2 Doped by AlOx

(2021) Connor J. McClellan et al.   ACS Nano

High On-State Current in Chemical Vapor Deposited Monolayer MoS2 nFETs With Sn Ohmic Contacts

(2021) Ang-Sheng Chou et al.   IEEE ELECTRON DEVICE LETTERS

Promises and prospects of two-dimensional transistors

(2021) Yuan Liu et al.   NATURE

Ultralow contact resistance between semimetal and monolayer semiconductors

(2021) Pin-Chun Shen et al.   NATURE

Impact of device scaling on the electrical properties of MoS2 field-effect transistors

(2021) Goutham Arutchelvan et al.   Scientific Reports

Precise Layer Control and Electronic State Modulation of a Transition Metal Dichalcogenide via Phase‐Transition‐Induced Growth

(2021) Ahrum Sohn et al.   ADVANCED MATERIALS

Sub-10 nm two-dimensional transistors: Theory and experiment

(2021) Ruge Quhe et al.   PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS

Uncovering the Effects of Metal Contacts on Monolayer MoS2

(2020) Kirstin Schauble et al.   ACS Nano

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

(2019) Yan Wang et al.   NATURE

Van der Waals integration before and beyond two-dimensional materials

(2019) Yuan Liu et al.   NATURE

High-speed black phosphorus field-effect transistors approaching ballistic limit

(2019) Xuefei Li et al.   Science Advances

Graphene and two-dimensional materials for silicon technology

(2019) Deji Akinwande et al.   NATURE

Ultra-scaled MoS2 transistors and circuits fabricated without nanolithography

(2019) Kishan Ashokbhai Patel et al.   2D Materials

Many-Body Effect and Device Performance Limit of Monolayer InSe

(2018) Yangyang Wang et al.   ACS Applied Materials & Interfaces

Contact engineering for 2D materials and devices

(2018) Daniel S. Schulman et al.   CHEMICAL SOCIETY REVIEWS

First-Principles Simulations of FETs Based on Two-Dimensional InSe

(2018) Enrique G. Marin et al.   IEEE ELECTRON DEVICE LETTERS

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates

(2018) Yibo Zhu et al.   NANO LETTERS

High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS2

(2018) Kirby K. H. Smithe et al.   NANO LETTERS

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Two-dimensional transistors beyond graphene and TMDCs

(2018) Yuan Liu et al.   CHEMICAL SOCIETY REVIEWS

Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition

(2018) Han-Ching Chang et al.   Small

Suppressing Ambient Degradation of Exfoliated InSe Nanosheet Devices via Seeded Atomic Layer Deposition Encapsulation

(2018) Spencer A. Wells et al.   NANO LETTERS

First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide FETs in the Ballistic Limit

(2017) Yongsoo Ahn et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Argon Plasma Induced Phase Transition in Monolayer MoS2

(2017) Jianqi Zhu et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Scaling carbon nanotube complementary transistors to 5-nm gate lengths

(2017) Chenguang Qiu et al.   SCIENCE

Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors

(2016) Sangwoo Kang et al.   JOURNAL OF APPLIED PHYSICS

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

(2016) Amirhasan Nourbakhsh et al.   NANO LETTERS

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

(2016) Denis A. Bandurin et al.   Nature Nanotechnology

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Two-dimensional semiconductors for transistors

(2016) Manish Chhowalla et al.   Nature Reviews Materials

Benchmarking of MoS2FETs With Multigate Si-FET Options for 5 nm and Beyond

(2015) Tarun Agarwal et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Phase patterning for ohmic homojunction contact in MoTe2

(2015) S. Cho et al.   SCIENCE

Defect-Dominated Doping and Contact Resistance in MoS2

(2014) Stephen McDonnell et al.   ACS Nano

On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit

(2013) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Compact Models and the Physics of Nanoscale FETs

(2013) Mark S. Lundstrom et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs

(2012) Yang Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

The origins and limits of metal–graphene junction resistance

(2011) Fengnian Xia et al.   Nature Nanotechnology

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters

(2009) Ali Khakifirooz et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Graphene: Status and Prospects

(2009) A. K. Geim   SCIENCE

High-performance n-type carbon nanotube field-effect transistors with estimated sub-10-ps gate delay

(2008) Z. Y. Zhang et al.   APPLIED PHYSICS LETTERS

Current–voltage characteristics of a silicon nanowire transistor

(2008) Mohammad Taghi Ahmadi et al.   MICROELECTRONICS JOURNAL