First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide FETs in the Ballistic Limit

出版年份 2017 全文链接

标题

作者

关键词

出版物

Volume 64, Issue 5, Pages 2129-2134

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2017-03-28

DOI

10.1109/ted.2017.2679217

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