Article
Physics, Applied
Eugenia Pyurbeeva, Jacob L. Swett, Qingyu Ye, Oscar W. Kennedy, Jan A. Mol
Summary: Feedback-controlled electric breakdown of graphene can be applied to encapsulated graphene constrictions, resulting in conductance switching behavior attributed to atomic-scale fluctuations of graphene below the encapsulating layer. This method opens up possibilities for fabricating encapsulated room-temperature single-electron nanodevices and provides insights into the physical mechanism of conductance switching in graphene nanodevices.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Adolfo O. Fumega, Jose L. Lado
Summary: In this work, it is demonstrated that AB bilayer graphene encapsulated in MoTe2 acts as a valley valve that displays a switchable built-in topological gap, leading to ferroelectrically driven topological channels.
Article
Nanoscience & Nanotechnology
Xiangyu Liu, Zhujun Huang, Xiaorui Zheng, Davood Shahrjerdi, Elisa Riedo
Summary: Thermal scanning probe lithography (t-SPL) is a promising and growing nanopatterning method, considered an ideal candidate for industrial nanomanufacturing. It can be used to fabricate high-performance graphene-based transistors with advantages in fabrication time and cost, without the need for contact engineering strategies.
Article
Chemistry, Multidisciplinary
Jian Zhang, Gabriela Borin Barin, Roman Furrer, Cheng-Zhuo Du, Xiao-Ye Wang, Klaus Muellen, Pascal Ruffieux, Roman Fasel, Michel Calame, Mickael L. Perrin
Summary: Bottom-up synthesized graphene nanoribbons (GNRs) are of interest due to their atomically controlled structure and customizable physical properties. However, understanding the relationship between cryogenic charge transport and the number of GNRs in a device is challenging due to lack of precise control over GNR length and location.
Article
Chemistry, Multidisciplinary
Changhao Dai, Yi Yang, Huiwen Xiong, Xuejun Wang, Jian Gou, Pintao Li, Yungen Wu, Yiheng Chen, Derong Kong, Yuetong Yang, Daizong Ji, Jilie Kong, Andrew Thye Shen Wee, Yunqi Liu, Mingquan Guo, Dacheng Wei
Summary: In order to combat epidemics, a molecular diagnostic technique called the field-effect transistor (FET) biosensors has been developed for rapid screening of infectious agents. However, these biosensors have shown limited sensitivity in unprocessed biological samples. To address this issue, an electro-enhanced strategy using liquid-gate graphene field-effect transistors (LG-GFETs) has been developed, resulting in a 10-fold signal enhancement and a limit of detection down to 5 x 10(-16) g mL(-1) MPT64 protein in serum. The study achieved high sensitivity and specificity in the detection of tuberculosis, COVID-19, and human rhinovirus, making it promising for population-wide screening of infectious diseases.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
P. A. Maksym, H. Aoki
Summary: Potential barriers in bilayer graphene and monolayer transition metal dichalcogenides can split an unpolarized incident current into reflected and transmitted currents with opposite valley polarization. By adjusting the potential, 100% polarization can be obtained, and a valley polarizer can be realized using a collimated beam of carriers to incident on a barrier within a certain range of angles.
Article
Nanoscience & Nanotechnology
Anshuman Cherala, Parth N. Pandya, Kenneth M. Liechti, S. V. Sreenivasan
Summary: Emerging nanoscale applications in energy, electronics, optics, and medicine can benefit from incorporating nanoshaped structures with sharp corners. By utilizing nanoimprint lithography followed by metal-assisted chemical etching, diamond-like nanoshapes have been shown to improve device performance. Studies suggest that scaling nanoshaped imprinting down to sub-10 nm levels is achievable with improved resist materials and novel bridge structures.
MICROSYSTEMS & NANOENGINEERING
(2021)
Article
Nanoscience & Nanotechnology
Nikhil Tiwale, Satyaprasad P. Senanayak, Juan Rubio-Lara, Abhinav Prasad, Atif Aziz, Yury Alaverdyan, Mark E. Welland
Summary: This study presents a novel approach of direct-write electron-beam lithography (DW-EBL) to fabricate micron/nano-field-effect transistors (FETs) using ZnO solution precursors as negative tone resists. It demonstrates a significant improvement in the mobility and current density of ZnO FETs as the precursor pattern width decreases. The findings highlight the influence of pre-decomposition nanoscale precursor patterning on the grain morphology evolution in ZnO, enabling opportunities for large-scale integration and miniaturization of high-performance nanoscale oxide FETs.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Multidisciplinary Sciences
Sungjae Hong, Chang-Ui Hong, Sol Lee, Myeongjin Jang, Chorom Jang, Yangjin Lee, Livia Janice Widiapradja, Sam Park, Kwanpyo Kim, Young-Woo Son, Jong-Gwan Yook, Seongil Im
Summary: Graphene has been widely used as an insertion layer in vertically stacked devices due to its excellent electrical tunabilities. However, its implications at ultrahigh frequencies have been rarely explored. In this study, diode operation of vertical Pt/n-MoSe2/graphene/Au assemblies at a cutoff frequency of about 200 GHz was demonstrated. The electric charge modulation by the inserted graphene becomes essentially frozen above a few GHz frequencies, transforming the Ohmic graphene/MoSe2 junction into a pinning-free Schottky junction. The diodes with graphene insertion exhibit much lower total capacitance and an order of magnitude higher cutoff frequency compared to devices without graphene, highlighting the significance of graphene at high frequencies.
Article
Chemistry, Multidisciplinary
John J. Cully, Jacob L. Swett, Kyle Willick, Jonathan Baugh, Jan A. Mol
Summary: The synthesis of low-dimensional materials with unique properties has opened up new possibilities for creating hybrid nanomaterial devices. However, challenges remain in integrating individual nanoparticles into devices at scale. A graphene nanogap platform has been developed to address this issue, allowing for the capture and integration of single nanoparticles for applications in novel devices and optoelectronics.
Article
Physics, Applied
Junao Cheng, Hao Yang, Nicholas G. Combs, Wangzhou Wu, Honggyu Kim, Hareesh Chandrasekar, Caiyu Wang, Siddharth Rajan, Susanne Stemmer, Wu Lu
Summary: An electron transport study of an La-doped BaSnO3 thin film grown on DyScO3 was conducted, revealing the dominance of different scattering mechanisms at various electron concentrations. The study also successfully fabricated a gate-recessed ferroelectric field effect transistor with controlled electron concentration, showcasing high saturation current and on/off ratio.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Tao Liu, Xujie Tong, Shuoqiu Tian, Yuying Xie, Mingsai Zhu, Bo Feng, Xiaohang Pan, Rui Zheng, Shan Wu, Ding Zhao, Yifang Chen, Bingrui Lu, Min Qiu
Summary: Ice lithography is a promising technology in nanotechnology, however, its theoretical modeling and understanding are still limited. In this study, a Monte Carlo algorithm-based modeling method for ice lithography is developed and simulations are performed. The comparisons with conventional electron beam lithography show the superior properties of ice lithography.
Article
Materials Science, Multidisciplinary
Minho Yoon, Jiyoul Lee
Summary: This study introduces a novel p-type doping method for WSe2 using an organic molecule DNTT, which successfully transformed WSe2 FET from ambipolar to high-performance p-type transistor. Analysis revealed that hole charges from the DNTT layer were transferred to the WSe2 flake, reducing activation energy for charge transport and filling subgap trap states with additional doped charges. This proposed doping method based on charge transfer from an organic layer shows practical benefits for high-performance TMD-based transistor manufacturing.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Engineering, Biomedical
Mahya Ganjian, Khashayar Modaresifar, Dionysios Rompolas, Lidy E. E. Fratila-Apachitei, Amir A. A. Zadpoor
Summary: Developing a high-throughput nanopatterning technique with precise control over feature dimensions is crucial for studying cell-nanopattern interactions. This study presents a process that fulfills these criteria by using electron-beam lithography to fabricate controlled arrays of submicron pillars and developing etching procedures to create the desired height. The study demonstrates the significance of the fabricated pillars in inducing osteogenic differentiation and utilizes replication techniques to pattern bio-instructive surfaces. Overall, the method enables the precise fabrication of submicron and nanopatterns for systematic cell studies.
ACTA BIOMATERIALIA
(2022)
Article
Chemistry, Physical
Shan Wu, Ding Zhao, Guangnan Yao, Yu Hong, Min Qiu
Summary: Amorphous solid water (ASW) formed by vapor deposition at cryogenic temperatures is a competitive electron resist with advantages such as direct patterning and easy removal, showing good performance for lithographic applications in this study. The dose curves reveal ASW has low contrast and is minimally affected by incident electron energy, with linear ice elimination rate. The minimum linewidth of 12 nm is achieved on a 120-nm-thick ASW film, showcasing refined nanostructures like ice nanodots and micro-snowflakes.
APPLIED SURFACE SCIENCE
(2021)
Article
Physics, Applied
Omar B. Mohammed, Hema C. P. Movva, Nitin Prasad, Amithraj Valsaraj, Sangwoo Kang, Chris M. Corbet, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee
JOURNAL OF APPLIED PHYSICS
(2017)
Article
Nanoscience & Nanotechnology
Nasrin Banu, Surendra Singh, Saibal Basu, Anupam Roy, Hema C. P. Movva, V. Lauter, B. Satpati, B. N. Dev
Article
Physics, Multidisciplinary
Hema C. P. Movva, Timothy Lovorn, Babak Fallahazad, Stefano Larentis, Kyounghwan Kim, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, Allan H. MacDonald, Emanuel Tutuc
PHYSICAL REVIEW LETTERS
(2018)
Article
Nanoscience & Nanotechnology
Ke Chen, Anupam Roy, Amritesh Rai, Hema C. P. Movva, Xianghai Meng, Feng He, Sanjay K. Banerjee, Yaguo Wang
Article
Chemistry, Multidisciplinary
Kyounghwan Kim, Nitin Prasad, Hema C. P. Movva, G. William Burg, Yimeng Wang, Stefano Larentis, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Emanuel Tutuc
Article
Nanoscience & Nanotechnology
Pingping Zhuang, Weiyi Lin, Harry Chou, Anupam Roy, Weiwei Cai, Sanjay K. Banerjee
Article
Chemistry, Multidisciplinary
Di Wu, Wei Li, Amritesh Rai, Xiaoyu Wu, Hema C. P. Movva, Maruthi N. Yogeesh, Zhaodong Chu, Sanjay K. Banerjee, Deji Akinwande, Keji Lai
Article
Physics, Condensed Matter
Zheng Sun, Jonathan Beaumariage, Hema C. P. Movva, Sayema Chowdhury, Anupam Roy, Sanjay K. Banerjee, David W. Snoke
SOLID STATE COMMUNICATIONS
(2019)
Article
Materials Science, Multidisciplinary
Joon-Seok Kim, Rafia Ahmad, Tribhuwan Pandey, Amritesh Rai, Simin Feng, Jing Yang, Zhong Lin, Mauricio Terrones, Sanjay K. Banerjee, Abhishek K. Singh, Deji Akinwande, Jung-Fu Lin
Review
Physics, Applied
Sangwoo Kang, Xuehao Mou, Babak Fallahazad, Nitin Prasad, Xian Wu, Amithraj Valsaraj, Hema C. P. Movva, Kyounghwan Kim, Emanuel Tutuc, Leonard F. Register, Sanjay K. Banerjee
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2017)
Article
Chemistry, Multidisciplinary
Tanuj Trivedi, Anupam Roy, Hema C. P. Movva, Emily S. Walker, Seth R. Bank, Dean P. Neikirk, Sanjay K. Banerjee
Article
Physics, Applied
Anupam Roy, Rudresh Ghosh, Amritesh Rai, Atresh Sanne, Kyounghwan Kim, Hema C. P. Movva, Rik Dey, Tanmoy Pramanik, Sayema Chowdhury, Emanuel Tutuc, Sanjay K. Banerjee
APPLIED PHYSICS LETTERS
(2017)
Article
Chemistry, Multidisciplinary
Stefano Larentis, Babak Fallahazad, Hema C. P. Movva, Kyounghwan Kim, Amritesh Rai, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, Emanuel Tutuc