期刊
ACS NANO
卷 14, 期 11, 页码 14798-14808出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c03515
关键词
MoS2; 2D materials; metal contacts; Raman; XPS; doping; strain
类别
资金
- ASCENT, one of six centers in JUMP, a Semiconductor Research Corporation (SRC) program - DARPA
- National Science Foundation (NSF) EFRI 2-DARE
- Air Force Grant [FA9550-14-1-0251]
- Stanford SystemX Alliance
- NSF as part of the National Nanotechnology Coordinated Infrastructure [ECCS-1542152]
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC0276SF00515]
- NSF [DMR 1410334]
- Intel Corporation
- NSF Graduate Research Fellowship Program (GRFP) [DGE-1656518]
- Stanford Graduate Fellowships
- NSF GRFP [DGE1656518]
- NSF GRFP Grant [DGE1255832]
- Knut and Alice Wallenberg Foundation
- Department of Science and Technology, India
Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here, we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions from 3.1 to 5.2 eV) and monolayer MoS2 grown by chemical vapor deposition. We evaporate thin metal films onto MoS2 and study the interfaces by Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, and electrical characterization. We uncover that (1) ultrathin oxidized Al dopes MoS2 n-type (>2 x 10(12) cm(-2)) without degrading its mobility, (2) Ag, Au, and Ni deposition causes varying levels of damage to MoS2 (e.g. broadening Raman E' peak from <3 to >6 cm(-1)), and (3) Ti, Sc, and Y react with MoS2. Reactive metals must be avoided in contacts to monolayer MoS2, but control studies reveal the reaction is mostly limited to the top layer of multilayer films. Finally, we find that (4) thin metals do not significantly strain MoS2, as confirmed by X-ray diffraction. These are important findings for metal contacts to MoS2 and broadly applicable to many other 2D semiconductors.
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