Innovative Approach of Growing Thulium Oxide Passivation Layer in Nitrogen/Oxygen/Nitrogen Ambient

Luminescence properties of Tm2O3-doped germanate glass phosphors for near-infrared wideband light-source

(2021) Seiya Nishimura et al.   Journal of Materials Science: Materials in Electronics

Fabrication and characterization of highly transparent ZrO2-doped Tm2O3 ceramics

(2021) Xin Xu et al.   CERAMICS INTERNATIONAL

Comparative study of oxidizing ambient infused with varying nitrogen flow rates for fabrication of ternary nitrided AlZrO based MOS capacitor

(2020) Hock Jin Quah et al.   INTERNATIONAL JOURNAL OF ENERGY RESEARCH

Energy band diagram of metal/Tm 2 O 3 /Si stack structure acquired from the study of leakage current mechanisms

(2016) Bo Yao et al.   THIN SOLID FILMS

Annealing temperature modulated interfacial chemistry and electrical characteristics of sputtering-derived HfO 2 /Si gate stack

(2015) J. Gao et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Atomic-layer deposited thulium oxide as a passivation layer on germanium

(2015) I. Z. Mitrovic et al.   JOURNAL OF APPLIED PHYSICS

Thulium Silicate Interfacial Layer for Scalable High-k/Metal Gate Stacks

(2013) Eugenio Dentoni Litta et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Band offsets of epitaxial Tm2O3 high-k dielectric films on Si substrates by X-ray photoelectron spectroscopy

(2012) J.J. Wang et al.   APPLIED SURFACE SCIENCE

Interfacial Reaction and Electrical Properties of HfO2 Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode

(2011) Yi Wang et al.   ACS Applied Materials & Interfaces

Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics

(2009) Tung-Ming Pan et al.   APPLIED SURFACE SCIENCE