Annealing temperature modulated interfacial chemistry and electrical characteristics of sputtering-derived HfO 2 /Si gate stack

出版年份 2015 全文链接

标题

作者

关键词

High-k gate dielectric, Interface thermal stability, Sputtering, Electrical properties, Leakage current mechanism

出版物

Volume 647, Issue -, Pages 322-330

出版商

Elsevier BV

发表日期

2015-06-19

DOI

10.1016/j.jallcom.2015.05.157

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