Thulium Silicate Interfacial Layer for Scalable High-k/Metal Gate Stacks

Band offsets of epitaxial Tm2O3 high-k dielectric films on Si substrates by X-ray photoelectron spectroscopy

(2012) J.J. Wang et al.   APPLIED SURFACE SCIENCE

Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

(2012) Takashi Ando   Materials

Interface Trap Characterization of a 5.8-$\hbox{\rm{ \AA}}$ EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique

(2011) Moonju Cho et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer

(2011) Daisuke Kitayama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Rare Earth Oxide Capping Effect on La$_{2}$O$_{3}$ Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5 nm

(2011) Miyuki Kouda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)

(2011) L.-Å. Ragnarsson et al.   MICROELECTRONIC ENGINEERING

Interface and electrical properties of La-silicate for direct contact of high-k with silicon

(2010) K. Kakushima et al.   SOLID-STATE ELECTRONICS

Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO[sub 2] Gate Dielectrics

(2009) Johan Swerts et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY