Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability

标题
Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 58, Issue SC, Pages SCCD25
出版商
Japan Society of Applied Physics
发表日期
2019-05-28
DOI
10.7567/1347-4065/ab106c

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