The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

(2017) Masahiro Horita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

P-type doping of GaN$(000\bar{1})$ by magnesium ion implantation

(2016) Tetsuo Narita et al.   Applied Physics Express

Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

(2016) Cyrus E. Dreyer et al.   APPLIED PHYSICS LETTERS

Deep-level transient spectroscopy of low-free-carrier-concentration n-GaN layers grown on freestanding GaN substrates: Dependence on carbon compensation ratio

(2016) Takeshi Tanaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

(2016) Tran Thien Duc et al.   JOURNAL OF APPLIED PHYSICS

1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

(2015) Tohru Oka et al.   Applied Physics Express

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

(2015) Z. Zhang et al.   APPLIED PHYSICS LETTERS

Deep traps in GaN-based structures as affecting the performance of GaN devices

(2015) Alexander Y. Polyakov et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy

(2014) In-Hwan Lee et al.   JOURNAL OF APPLIED PHYSICS

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

(2014) J. L. Lyons et al.   PHYSICAL REVIEW B

Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies

(2013) Unhi Honda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Gallium nitride devices for power electronic applications

(2013) B Jayant Baliga   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy

(2012) Christophe A. Hurni et al.   APPLIED PHYSICS LETTERS

Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors

(2012) John L. Lyons et al.   PHYSICAL REVIEW LETTERS

Planar Nearly Ideal Edge-Termination Technique for GaN Devices

(2011) A. Merve Ozbek et al.   IEEE ELECTRON DEVICE LETTERS

Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth

(2011) A. Y. Polyakov et al.   JOURNAL OF APPLIED PHYSICS

Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors

(2011) Y. S. Puzyrev et al.   JOURNAL OF APPLIED PHYSICS

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Deep level investigation of p-type GaN using a simple photocurrent technique

(2009) A. Armstrong et al.   JOURNAL OF APPLIED PHYSICS

Evidence for Two Mg Related Acceptors in GaN

(2009) B. Monemar et al.   PHYSICAL REVIEW LETTERS

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

(2008) Masahito Kodama et al.   Applied Physics Express

Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

(2008) A. Armstrong et al.   JOURNAL OF APPLIED PHYSICS