4-kV and 2.8- $\text{m}\Omega $ -cm2 Vertical GaN p-n Diodes With Low Leakage Currents

标题
4-kV and 2.8- $\text{m}\Omega $ -cm2 Vertical GaN p-n Diodes With Low Leakage Currents
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 10, Pages 1073-1075
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2015-09-10
DOI
10.1109/led.2015.2474817

向作者/读者发起求助以获取更多资源

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started