Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300 °C by inserting TiO2 interlayers

Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

(2020) Anton E. O. Persson et al.   APPLIED PHYSICS LETTERS

A highly CMOS compatible hafnia-based ferroelectric diode

(2020) Qing Luo et al.   Nature Communications

Lattice distortion induced internal electric field in TiO2 photoelectrode for efficient charge separation and transfer

(2020) Yuxiang Hu et al.   Nature Communications

The role of plasma in plasma-enhanced atomic layer deposition of crystalline films

(2020) David R. Boris et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Direct comparison of ferroelectric properties in Hf0.5Zr0.5O2 between thermal and plasma-enhanced atomic layer deposition

(2020) Jae Hur et al.   NANOTECHNOLOGY

Lanthanum doping induced structural changes and their implications on ferroelectric properties of Hf1−xZrxO2 thin film

(2020) Furqan Mehmood et al.   APPLIED PHYSICS LETTERS

Microstructural and magnetic properties of epitaxial Ni50Mn37/35Sn13/15 Heusler alloy thin films grown by pulsed laser deposition

(2020) B. Vishal et al.   JOURNAL OF CRYSTAL GROWTH

Impact of Growth Conditions on Phase Selectivity and Epitaxial Quality of TiO2 films Grown by Plasma Assisted Atomic Layer Deposition

(2019) Jason R. Avila et al.   CHEMISTRY OF MATERIALS

Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition

(2019) Takashi Onaya et al.   MICROELECTRONIC ENGINEERING

A simple variant selection in stress-driven martensitic transformation

(2019) Binbin Yue et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers

(2019) Takashi Onaya et al.   APL Materials

Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors

(2019) Furqan Mehmood et al.   Advanced Materials Interfaces

Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate

(2019) Sang Jae Lee et al.   AIP Advances

Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

(2019) Igor Krylov et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

(2018) Si Joon Kim et al.   APPLIED PHYSICS LETTERS

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

(2018) Si Joon Kim et al.   JOM

Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films

(2018) Perttu Sippola et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications

(2017) K. Florent et al.   JOURNAL OF APPLIED PHYSICS

Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing

(2017) Bo-Ting Lin et al.   JOURNAL OF THE EUROPEAN CERAMIC SOCIETY

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

(2017) Min Hyuk Park et al.   Nanoscale

A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

(2017) M. H. Park et al.   Journal of Materials Chemistry C

Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System

(2017) Claudia Richter et al.   Advanced Electronic Materials

Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

(2017) Min Hyuk Park et al.   Nanoscale

Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

(2016) Min Hyuk Park et al.   ACS Applied Materials & Interfaces

Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties

(2016) Sergei Zarubin et al.   APPLIED PHYSICS LETTERS

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

(2016) Takahisa Shiraishi et al.   APPLIED PHYSICS LETTERS

Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks

(2016) A. G. Chernikova et al.   APPLIED PHYSICS LETTERS

Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition

(2016) Maria Berdova et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition

(2015) Peter Schindler et al.   LANGMUIR

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS