Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition

出版年份 2019 全文链接

标题

作者

关键词

Plasma-enhanced atomic layer deposition, Ferroelectric Hf, x, Zr, 1-x, O, 2, thin film, Low temperature fabrication process, High-k material

出版物

Volume -, Issue -, Pages 111013

出版商

Elsevier BV

发表日期

2019-05-29

DOI

10.1016/j.mee.2019.111013

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